| 摘要 |
PURPOSE: To provide an optical element, which is especially useful with regard to data communication equipment, and also extremely useful for optical digital application in combination with a high-sensitive polarized-light optical detector and switches the polarized light into a TM mode and a TE mode at high speed. CONSTITUTION: This is a semiconductor laser device 10, having a quantum well(QW) or a multiple quantum well(MQW) of a strain layer having a polarized layer, that can be switched to a TE mode and a TM mode by the electric field applied from the outside vertically on a quantum-well layer 16 by an electrode 22. The switching of the polarized light is the result of the inversion of the valence electron band which is introduced by the electric field applied on the quantum well of the strain layer. Since the population inversion is maintained during the switching, the high-speed switching can be realized. |
