| 摘要 |
PURPOSE:To measure an asymmetric aberration of a projection optical system at a high speed with high accuracy without using a scanning type electron microscope. CONSTITUTION:Lattice patterns 14, 15 are exposed by the first exposure, lattice patterns 16, 17 are exposed by the second exposure and shielding pattern images 18, 19 are exposed by the third exposure to obtain resist patterns 20 and 21 at both ends after the development. An asymmetric aberration of the projection optical system is obtained from a difference between respective lengths L1 and L2 of the resist patterns 20 and 21. |
