| 摘要 |
PURPOSE:To enable the application of the method to lithography using radiations of short wavelengths, such as UV rays and ionizing radiations and to form fine patterns having rectangular sections without generation of the eaves occurring in hardly soluble layers. CONSTITUTION:This method has a stage for forming a radiation sensitive layer consisting essentially of a radiation sensitive compsn. having a compd. which can generate an acid by irradiation with chemical radiations and at least one bonds which can be decomposed by the acid on a substrate, a stage for forming an acidic coating layer on the radiation sensitive layer, a stage for irradiating the radiation sensitive layer and the acidic coating layer with the chemical radiations in patterns and a stage for subjecting the radiation sensitive layer and the acidic coating layer to development processing. |
