| 摘要 |
PURPOSE: To obtain luminescence from an indirect band-gap semiconductor material such as crystal silicon by a method, wherein a first region and a second region of an indirect gap semiconductor are formed, so that quantum carriers are confined multi-dimensionally. CONSTITUTION: A p-type region 14 is formed in a crystal silicon substrate 12. A p-n diode junction structure is formed, so as to have a connection such that a doped n-type layer 16 comes into contact with the region 14. Following a form of the layer 16, a material layer 18 is vapor-deposited or formed on an exposed surface on the upper side of the layer 16. Next, patterns are formed on the layer 18, so that an array of a dot 18a remains on the layer 16 to be etched. A vertical wall column 20, comprising a laminated region of a p-type material 14, an n-type material 16 and an insulating material (dot 18a) is formed. Next, the column 20 where the p-n junction exists is narrowed, and necessary quantum confining must be obtained. For this reason, O2 or H2 O is used, and the column is oxidized. |
