| 摘要 |
PURPOSE:To obtain a crystal with a reduced lattice mismatch occurring between a substrate and compound semiconductor crystals which epitaxially grow on the substrate with respect to a crystal used for producing an infrared imaging device. CONSTITUTION:A compound semiconductor crystal 5 is grown over a semiconductor substrate 4. A light receiving element is disposed on the epitaxially grown compound semiconductor crystal 5, and a signal processing element for processing a signal detected by the light receiving element is disposed on the semiconductor substrate 4. In a crystal used for producing a semiconductor device with such elements, a direction <hk1> (where, h=1, k=-l and 1=0) of the semiconductor substrate 4, a surface orientation of which is a (111) surface, is arranged at an angle of 30 degrees with respect to a direction < hk1> (where, h=1, k=-l, l=0) of the compound semiconductor crystal 5 which is epitaxially grown over the semiconductor substrate. |
