| 摘要 |
<p>PURPOSE:To reduce current consumption of a semiconductor memory in which a cache memory is incorporated. CONSTITUTION:When the two-way transfer gate BTG is operated, at least the clamp function of a clamp circuit which receives transferred data is stopped, out of the clamp circuit (CRS) which is provided at a pair of the SRAM bit line(SBL) and the clamp circuit (CRD) which is provided at the DRAMIO line(DIO). Therefore, since the clamp operation of the clamp circuit which receives transferred data is stopped, a path in which a through current flows from the clamp circuit to the driving transistor of the transfer gate at the time of data transfer is stopped, and current consumption is reduced.</p> |
