| 摘要 |
<p>PURPOSE:To prevent cracks and nicks in dividing a semiconductor substrate into a plurality of chips by growing a polycrystalline silicon in thickness of more than 2mum after grinding a back side of the semiconductor substrate, and obtaining semiconductor chips through scribing. CONSTITUTION:The manufacture comprises a process of grinding a back side of a semiconductor substrate 1, and a process of growing a polycrystal silicon on the back side of the semiconductor substrate 1 in thickness of more than 2mum. Subsequently, the semiconductor substrate 1 is scribed along a scribe line formed on a top side 2 of the semiconductor substrate 1. As a result, semiconductor chips 9 become to be obtained. On one hand, the polycrystal silicon cuts into the fine rugged part of a crushed layer 5 composed of single crystal silicon. The polycrystalline silicon has good bonding performance with the single crystal silicon. A film thickness T4 of the polycrystalline silicon layer 6 is worth to reinforce satisfactorily the strength of the semiconductor substrate 1. As a result, semiconductor chips having no cracks of a wafer and nicks of a chip can be obtained by a simple process.</p> |
