SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To control the short channel effect in MOS transistors. CONSTITUTION:An N-type diffusion layer 2 for source, rectangular in plane shape, is formed; a P-type epitaxial layer 6 is formed thereon; and an N-type diffusion layer 10 for drain is formed thereon in turn. A word line 8 is formed on the four sidewalls of the epitaxial layer 6 with a gate oxide film 7 in-between. Insulation is provided by a thick silicon oxide film 3 between the word line 8 and the source 2; insulation is provided by another thick silicon oxide film 15 between the word line 8 and the drain 10. The channel is longitudinally formed in the epitaxial layer 6.