| 摘要 |
PURPOSE:To improve the yield and reliability without increasing the cell size by forming a local wiring in a region for forming a window for local wiring, located above a word line away from a region with a window for forming a storage electrode and forming a storage electrode in the region with a window for forming a storage electrode through the local wiring. CONSTITUTION:DRAM cells shifted by 1/4 pitch. A bit line is formed along a bit contact on a semiconductor substrate 1 having a plurality of word lines 5 with side walls 7. A local wiring 17 is formed in a region for forming a window 15 for local wiring in such a way that the window 15 will be buried. In a region with a window of a storage electrode away from the region for forming the window 15 for local wiring, formed is a storage electrode 20 as a lower electrode to be connected with the local wiring 17 through a window 13 of the storage electrode. Moreover, a capacitor insulating film 21 is formed so that it will extend from the upper face of the storage electrode 20 at least to above the bit line. A capacitor upper electrode 22 is formed on the capacitor insulating film 21. |
