| 摘要 |
PURPOSE:To provide a quantum effect device with highly integrated density and easily changeable functions, by forming a control electrode for controlling conditions of a two-dimensional electron gas. CONSTITUTION:In an epitaxial growth method, a GaAs layer 2 and an n-type AlGaAs layer 3 are formed one by one on a semi-insulating substrate 1 made of GaAs. The GaAs layer 2 and the AlGaAs layer 3 constitute a so-called HEMT structure, in which a two-dimensional electron gas 4 is formed at an interface between the GaAs layer 2 and the AlGaAs layer 3. Moreover, fourteen control electrodes g1 to g11 and G1 to G3 are provided on the AlGaAs layer. When a negative bias voltage is applied to these control electrode g1 to g11 and G1 to G3, a depletion layer can be provided so that the two-dimensional electron gas 4 can be controlled in its shape. |
