Semiconductor device having reinforced getter effect - comprises substrate having main surface and lower oxide layer surface with layer of getter material on oxide layer

摘要

Semiconductor device (I) comprises: (a) a substrate (2) of semiconductor material having a main surface (7), suitable for forming semiconductor appts. on it, and a lower surface (9) having a natural oxide layer (3) on it and of thickness of not more than 10 Angstroms; and (b) a layer of getter material (5) on the oxide layer (3). Prodn. of a semiconductor substrate of a wafer (1) made of semiconductor material is also claimed. ADVANTAGE - The getter effect is reinforced.