COMPOSITION OF PHOTORESIST

摘要

This new photoresist composition for submicron lithography is adjusted to i-beam of ultraviolet. The photoresist composition comprises a comarine pigment of formula (I) as functional sensitizer and cresol-novolac resin of (III) and (IV). In formula (I), D is H or naphtoquinone diazide compd; Xn is C1-8 alkyl or aryl and has C2 symmetry; and Y is H, X, or estrones of naphtoquinoe diazide. Additives of (II) is used for vertical pattern forming. Pref. the cresol-novolac resin has characterization that average mol. wt is 4500-13000 by GPC and mol. wt. dispersity is below 12.