| 摘要 |
PURPOSE:To enable a light emitting diode to be enhanced in brightness and lessened in cost by a method wherein the surfaces of a P-N junction region provided to a current path are joined together in a transverse direction so as not to be covered with an electrode, and a Bragg type light reflecting multilayered film is provided between a plane where a current path is provided and the surface of a substrate. CONSTITUTION:A Bragg reflective film 102 is provided onto a substrate 101, and a light emitting layer 103 and a carrier injection layer 104 used for injecting minority carrier into the layer 3 are formed adjacent to each other on the film 102. Electrodes 105 and 106 are provided to the layers 103 and 104 respectively. When a forward bias voltage is applied between the electrodes 105 and 106 of this light emitting diode, a current flows in parallel with the surface of the substrate 101 to enable a light emission recombination region 108 close to a P-N junction plane 107 to emit light. By this constitution, as the light emission recombination region 108 is not covered with the electrodes 105 and 106, no light is absorbed by the electrodes 105 and 106. A current does not flow through the Bragg reflecting film 102 of high resistance, so that a light emitting diode of this design is set free from releasing heat and enhanced in brightness. |
