| 摘要 |
A memory cell, which comprises a gate having an expanded effective channel length and a large capacitance capacitor, is prepared by (1) forming a block oxide film by photo-etching, (2) depositing a thin polysilicon film for a transistor channel, (3) eliminating the polysilicon on a field region, (4) annealing for recrystallization, (5) depositing a thick polysilicon film, forming a side wall polysilicon film by etching and annealing, (6) forming a gate oxide film over all region and forming a source/drain region by ion-implaning on the side wall polysilicon film, (7) forming a gate polysilicon film on an activated region and a field region and forming a contact between gates by photo-etching, and (8) forming a polysilicon film for stack structure and a polysilicon film for storage node, and forming a capacitor dielectric film and a plate polysilicon film in turn.
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