发明名称 |
METHOD FOR GROWING SINGLE CRYSTAL THIN FILMS OF ELEMENT SEMICONDUCTOR |
摘要 |
A method for growing a single crystal thin film of an element semiconductor which comprises repeating the successive operations of feeding a single kind of gas containing the element semiconductor as a component element onto a substrate heated in a growth chamber and then exhausting the gas in the growth chamber under controlled conditions and thereby growing the single crystal thin film of said element semiconductor in a desired thickness with a precision of monomolecular layer. In an alternate method for growing a single crystal thin film of an element semiconductor, the sole gas containing the element semiconductor is continuously fed onto the substrate for a given period of time, thereby forming a single crystal thin film of element semiconductor having a desired thickness. According to the present invention, there can be obtained single crystal thin films with high quality in a high reproducibility, by simplified operating parameters and growing apparatus. |
申请公布号 |
EP0259777(B1) |
申请公布日期 |
1993.08.25 |
申请号 |
EP19870112838 |
申请日期 |
1987.09.02 |
申请人 |
RESEARCH DEVELOPMENT CORPORATION OF JAPAN;NISHIZAWA, JUNICHI;SEIKO INSTRUMENTS INC. |
发明人 |
NISHIZAWA, JUNICHI;AOKI, KENJI |
分类号 |
C30B25/02;C30B25/14;C30B25/16;C30B29/06;H01L21/205 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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