| 摘要 |
<p>In a solid-state image pickup device, a photodiode (32) and a transfer channel (33) are formed in a semiconductor substrate (31). A transfer gate electrode (35) is formed on a gate dielectric film (34) on the substrate (31). An interlayer film (36) is formed over the transfer gate electrode (35) and a first light-shield film (37) for shielding the transfer channel from light is formed on the interlayer film (36). An interlayer dielectric film (38, 44) is formed on the first light-shield layer, and a second light shield layer (42) is formed thereon. The interlayer dielectric film is composed of a first interlayer dielectric film (38) and a second interlayer dielectric film (44), and during etching of the interlayer dielectric film, the second interlayer dielectric film exhibits a lower etching rate than the first interlayer dielectric film, and the second interlayer dielectric film is formed beneath the first interlayer dielectric film. When etching, for example, the second light-shield film on the interlayer dielectric film, the reduction of film thickness of the first interlayer dielectric film can vary significantly. However, the desired interlayer dielectric film breakdown voltage is achieved by the second interlayer dielectric film substantially irrespective of the etching conditions, and permits thinner interlayer dielectric films to be used. <IMAGE></p> |
