COMPOSITE SEMICONDUCTOR STRUCTURE FOR REDUCING SCATTERING OF CARRIERS BY OPTICAL PHONONS AND A SEMICONDUCTOR DEVICE THAT USES SUCH A COMPOSITE SEMICONDUCTOR STRUCTURE,申请号EP19920113232-传众专利搜索

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发明名称	COMPOSITE SEMICONDUCTOR STRUCTURE FOR REDUCING SCATTERING OF CARRIERS BY OPTICAL PHONONS AND A SEMICONDUCTOR DEVICE THAT USES SUCH A COMPOSITE SEMICONDUCTOR STRUCTURE
摘要
申请公布号	EP0526870(A3)	申请公布日期	1993.08.25
申请号	EP19920113232	申请日期	1992.08.03
申请人	FUJITSU LIMITED	发明人	TSUCHIYA, TAKUMA
分类号	H01L21/20;H01L21/338;H01L29/15;H01L29/812;H01L33/06;H01L33/30;H01L33/34;(IPC1-7):H01L29/14	主分类号	H01L21/20
代理机构		代理人
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