| 摘要 |
A nonvolatile memory device is prepared by defining areas by lithography (L), forming an oxide film (F) and a nitride F in order, making a tunnel oxide F, implanting impurity in it, coating a polysilicon F, making the first poly in the memory cell by L, coating an insulating F, making the field oxide F to divide into a memory cell and an active area, forming a gate oxide F after etching all area except the memory area, making a gate at the second poly and active area in the memory cell by L after coating a polysilicon F, coating an insulation F on all the area, making a contact hole by L to form a metal electrode.
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