发明名称 |
Method of making solid-state imaging device |
摘要 |
A method for producing a solid-state imaging device including a photodetector including implanting two different dopant impurity ions, each producing the second conductivity type and having different diffusion coefficients in a first conductivity type semiconductor layer; thermally diffusing the implanted ions to produce a second conductivity type region including a relatively deep second conductivity type subregion and a relatively shallow second conductivity type region having a higher dopant impurity concentration than said relatively deep second conductivity type subregion; forming a charge transfer electrode on said semiconductor layer such that an edge of said electrode lies adjacent part of the junction between said semiconductor layer and said second conductivity type region; and implanting a dopant impurity producing the first conductivity type in said second relatively shallow second conductivity type subregion using said charge transfer electrode as a mask to produce a first conductivity type impurity diffusion region shallower than said relatively shallow second conductivity type subregion.
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申请公布号 |
US5238864(A) |
申请公布日期 |
1993.08.24 |
申请号 |
US19920974076 |
申请日期 |
1992.11.10 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MAEGAWA, SHIGETO;SAKAKIBARA, KIYOHIKO;YAMAMOTO, HIDEKAZU |
分类号 |
H01L27/148;H01L29/768;H01L31/101;H01L31/103 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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