发明名称 Carbonaceous protective films and method of depositing the same
摘要 Diamond films are formed by chemical vapor reation. Nitrogen or halogen compound gas is inputted to the reaction chamber together with a reactive gas of hydrocarbon. The resistivity, transparency and hardness of the deposited films can be controlled by adjusting the introduction rate of the halogen or nitrogen.
申请公布号 US5238705(A) 申请公布日期 1993.08.24
申请号 US19890380328 申请日期 1989.07.17
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 HAYASHI, SHIGENORI;HAMATANI, TOSHIJI;YAMAZAKI, SHUNPEI
分类号 C23C16/27;C30B25/10 主分类号 C23C16/27
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