DIAMOND LASER CRYSTAL AND METHOD OF MANUFACTURING THE SAME

摘要

Disclosed herein is a method of manufacturing a diamond laser crystal having excellent laser efficiency. First, a synthetic type Ib diamond containing at least 60 volume percent of a (111) plane growth sector (43) is prepared. This synthetic diamond is thermally treated under high temperature/high pressure, so that type Ib nitrogen contained in the synthetic diamond is converted to type IaA nitrogen. Thereafter an electron beam is applied to the synthetic diamond in order to generate vacancies in the synthetic diamond. Finally, annealing is performed on the synthetic diamond to form H3 centers by coupling type IaA nitrogen contained in the synthetic diamond with the vacancies. According to this method, the H3 centers can be formed in the synthetic type Ib diamond in high concentration, while formation of NV centers which become an obstacle to laser action can be suppressed.