| 摘要 |
A first semiconductor substrate provided with an oxide film having protruded portions on a principal surface thereof is laminated and thermally bonded to a second substrate having recessed portions corresponding to the protruded portions. Alternatively, a first semiconductor substrate provided with an oxide film having recessed portions formed on a principal surface thereof is laminated and thermally bonded to a second semiconductor substrate provided with an oxide film constituting protruded portions corresponding to the recessed portions. The thermally bonded semiconductor substrates are polished from the side of the semiconductor toward the oxide film, and the protruded portions of the oxide film are used as a stopper, thus enabling a semiconductor layer having a desired thickness to be formed on the oxide film.
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