发明名称 |
Silicon photodiode for monolithic integrated circuits |
摘要 |
An integrated photodiode is formed by providing a silicon substrate with a deep recessed tub in excess of about 20 microns, forming an isolated p-n junction on the peripheral tub surfaces, and selectively epitaxially filling the tub with intrinsic silicon. A desired monolithic integrated circuit is fabricated outside the tub periphery using conventional VLSI techniques. A photodiode electrode structure within the tub periphery can be fabricated at the same time as other monolithic circuit components are formed.
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申请公布号 |
US5239193(A) |
申请公布日期 |
1993.08.24 |
申请号 |
US19920880871 |
申请日期 |
1992.05.11 |
申请人 |
AT&T BELL LABORATORIES |
发明人 |
BENTON, JANET L.;JINDAL, RENUKA P.;XIE, YA-HONG |
分类号 |
H01L27/144;H01L31/0352 |
主分类号 |
H01L27/144 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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