发明名称 Method of manufacturing silicon nitride sintered bodies
摘要 Silicon nitride sintered bodies are disclosed which contain silicon carbide therein and in which intergranular phases between silicon nitride particles are substantially crystallized. Further, a manufacturing method of the sintered bodies is disclosed, in which a silicon carbide powdery raw material is used as an additive when preparing raw powders and the intergranular phases are crystallized during a temperature descending stage following a firing. Silicone carbide effectivley promotes densification of the structure of the sintered body and crystallization of the intergranular phases, thereby making it possible to provide the sintered bodies having intergranular phases with little glass phases uncrystallized and excellent high-temperature strengths.
申请公布号 US5238882(A) 申请公布日期 1993.08.24
申请号 US19920894640 申请日期 1992.06.05
申请人 NGK INSULATORS, LTD. 发明人 TAKAHASHI, TOMONORI;ISOMURA, MANABU;MATSUHIRO, KEIJI
分类号 C04B35/584;C04B35/593 主分类号 C04B35/584
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