THINNFILM TRANSISTOR AND ITS MANUFACTURE

摘要

PURPOSE:To obtain a thin-film transistor which excels in both electric and physical properties by forming the gate electrode of Al or the like on the insulating substrate, converting the surface layer into the insulating metal layer and forming the source- drain electrodes of Au or the like on the metal layer and extending onto the substrate along with the semiconductor layer of CdSe or the like formed between those electrodes. CONSTITUTION:The metal such as Al, Ta or the like is evaporated on insulating substrate 13 made of glass, ceramics, quartz and others to form gate electrode 14. Then the surface layer is converted to insulating oxide metal film 15 of Al2O3, Ta2O5 or the like through the anode oxidation. After this, source and drain electrodes 16 and 17 of Au, Co, Ni, Al or the like are coated on the entire surface in order to secure a good contact with semiconductor layer 18 to be provided later, and semiconductor layer 18 made of CdSe, CdS, Te, PbS or the like and extends onto electrode 16 and 17 is evaporated with a contact to film 15 after drilling an opening on film 15. Thus, a thin-film transistor is obtained. In such way, the manufacture can be facilitated, at the same time eliminating occurrence of the damage or contamination.