| 摘要 |
PURPOSE: To form a high-density DRAM by forming a stacked capacitor around the projections of a substrate after the formation of the substrate. CONSTITUTION: A photoresist layer 15 is coated on a top surface of a substrate 1, and parts of the layer corresponding to a mask are left and the other are removed to thereby form projections 30. A conductive layer for a primary charge storage electrode is formed on the entire structure, and then a photoresist corresponding nearly to the width of an interlayer insulating film 6 is left by an etching process, to thereby form a primary charge storage electrode 8A. A conductive layer 10 for a secondary charge storage electrode is formed on the entire structure. Thereafter, a secondary charge storage electrode 10A is left only for sidewalls of an interlayer film 6 forming the sidewalls of the projection 30, thus forming a charge storage electrode 11 having primary and secondary storage electrodes 8A and 10A connected together. A dielectric film 12 is formed on the electrode 11, and a plate electrode 13 is formed on the dielectric film 12 and film 6 to thereby form stacked capacitors of a structure surrounding the projections. Thus fabricated a DRAM which has a minimum area for unit cell can be manufactured. |
