| 摘要 |
<p>PURPOSE:To obtain a flash EEPROM selecting plural blocks and erasing them en bloc by automatic erasure. CONSTITUTION:This memory is provided with a source line decoder 42 decoding selectively a source line at every block constituted of a memory cell in bit line and a block latch circuit 43 latching the output of the decoder 42. Then the high voltage of a source line switch 3 is applied selectively to only the source line selected by a source line gate 44 and the memory cells of the blocks corresponding to plural selected source lines are erased simultaneously and address designation at an erase verifying time while erasing automatically by a block latch circuit 45 is effective only to the block selected and erased.</p> |
