| 摘要 |
<p>PURPOSE:To eliminate the unequalness of the orientability and electric field of a liquid crystal and to enhance image quality by controlling the insulating layer under a picture element electrode and eliminating the gap between a thin-film transistor(TFT) and a picture element part. CONSTITUTION:The part of an Si layer formed on a glass substrate 1 where the part faced to a picture element electrode 7 is oxidized to LOCOS to form a LOCOS insulating layer 8 having a large film thickness, by which the picture element electrode 7 is shifted to a high position and the thin-film electrode and the picture element part are flattened. Further, a metal consisting of W or Si is previously deposited by evaporation on the upper part of the drain 3 and thereafter, ITO is deposited by evaporation on the drain 3 with which the contact is made hard by the shift of the picture element electrode 7 to connect the picture element electrode 7 and the drain 3 of the TFT. The LOCOS layer is formed by the method of depositing polycrystalline Si by CVD on a quartz substrate. SiN is then patterned via a thin oxide film on the surface of the polycrystalline Si and is selectively oxidized, by which the LOCOS layer increased in the thickness by the oxidation is obtd.</p> |
