| 摘要 |
PURPOSE: To uniformly remove a peripheral strip of an insulator cap, prior to epitaxial deposition operation by bringing a surface of a first substrate into contact with a surface of a second substrate having the same size as that of the first substrate, and exposing the substrates to a vapor-etching atmosphere for a period sufficient for removing material strip from the first substrate. CONSTITUTION: A deposited silicon wafer, comprising a top wafer 10, a bottom wafer 12 and an intermediate wafer 11, is placed on a holding tool having a bottom plate 14 slanted at an angleθ. Then, a quartz top plate 13 is placed on the deposited wafer to flatten the curvature of the wafer by application of sufficient weight to the wafer. Next, the deposited wafer is placed in an etching bath, and in a vacuum-etching chamber, plasma is generated and etching is performed by increasing the pressure, while introducing a CF4 gas and applying electricity, so as to remove the peripheral strip of the insulator cap material. Next, when the peripheral strip has been removed uniformly, an epitaxial deposition process is performed. |
