| 摘要 |
PURPOSE:To provide a thin film mask ROM, having large area, which can be manufactured easily at low cost. CONSTITUTION:The opposing part of a row address line 11, a column address line 13 and an earth line 14 are used as write-in regions A of one-bit component, and a semiconductor film 15 is formed on the prescribed write in region among the write-in regions A. On this write-in regions A, the row address line 11 is formed as a gate electrode and the column address line 13 and the earth line 14 are formed as source and drain electrodes, and at the same time, a thin film transistor T, having a semiconductor film 15 as a channel region, is constituted. |
