| 摘要 |
PURPOSE:To prevent generation of distortion by a method wherein a semiconductor layer is formed on a substrate, a source and drain electrode is formed by separating the semiconductor layer, an active part and a memory storage are formed separately. CONSTITUTION:On an active part, a polycrystalline silicon semiconductor layer is formed on an insulated substrate 3. Source and drain regions 5 and 6 are separated by implanting P-ions into the surface of the polycrystalline silicon semiconductor layer, contact layers 7 and 8 are formed on the source and drain regions 5 and 6, and source and drain electrodes 9 and 10 are formed thereon. A SiNX gate insulating film 11 is formed on the surface of the part where the source and drain regions 5 and 6 are separated, and an Al gate electrode 12 is formed thereon. On a memory part 2, an electrode 13, consisting of Pt and the like, is formed on the substrate 3, a ferroelectric substance thin film 14, consisting of lead titanate, is formed thereon as a non-volatile memory part, and an Al electrode 15 is formed thereon. As the active part 1 and the memory part 2 are separated, the distortion due to the difference in thermal expansion coefficient between the semiconductor and the ferroelectric substance when heated can be prevented. |
