| 摘要 |
<p>PURPOSE: To speed up data input/output processing by suppressing the generation of a DC current when write operation is executed after read-out operation in a semiconductor memory device. CONSTITUTION: This circuit is provided with sense circuits 59, 60 for sensing a potential difference between a bit line pair 53, 54, input circuits 63, 64 for inputting the data and output circuits 61, 62 for outputting the data. Then, the output circuits 61, 62 are made non-conductive by a reading column selection line signal RCSL at a write-in operation time, and common input/output line pair 65, 66 are separated electrically from the output circuits 61, 62 and the sense circuits 59, 60.</p> |
