| 摘要 |
PURPOSE:To restrain an active layer from overflowing with electron so as to decrease the oscillation threshold current of a semiconductor laser by a method wherein a first crystal growth process through an MO-VPE method is ended with the growth of an N-type GaAs layer. CONSTITUTION:A first crystal growth is carried out through an MO-VPE method at a growth temperature of 660 deg.C under a growth pressure of 75Torr to obtain a layered structure. An Si-doped N-type GaAs buffer layer 2 of 1X10<18>cm<-3> carrier concentration and 0.5mum thickness, an Si-doped N-type (Al0.6Ga0.4)0.5In0.5P clad 3 of 5X10<17>cm<-3> carrier concentration and 1mum thickness, an undoped (Al0.1Ga0.9)0.5In0.5P active layer 4 of 0.06mum thickness, a Zn-doped P-type (Al0.6Ga0.4)0.5P clad layer 5 of 4X10<17>cm<-3> carrier concentration and 1mum thickness, an Zn-doped P-type Ga0.5In0.5P layer 6 of 4X10<18>cm<-3> carrier concentration and 0.1mum thickness, and an Si-doped N-type GaAs layer 7 of 5X10<17>cm<-3> carrier concentration and 0.2mum thickness are successively laminated on an N-type GaAs substrate 1 to contitute the layered structure concerned.
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