发明名称 PRODUCTION OF THIN FILM OF PEROVSKITE MATERIAL
摘要 A method of growing KTaxNb1-xO3 by pulsed laser evaporation. In order to compensate for the volatile K, two targets are prepared, one of sintered oxide powder having K, Ta, and Nb in amounts stoichiometric to KTaxNb1-xO3 and the other of melt-grown KNO3. The method can also be used to form other complex materials having volatile components using a variety of sputtering growth techniques. The two targets are mounted on a rotating target holder and are alternately ablated by the laser beam. The KNO3 provides excess K, thus allowing the growth of a stoichiometric film. The method can be applied to many complex materials for which some of the components are volatile.
申请公布号 JPH05208895(A) 申请公布日期 1993.08.20
申请号 JP19910334667 申请日期 1991.12.18
申请人 HEINRICH HERTZ INST NACHRICHTENTECH BERLIN GMBH;BERUKOA BELL COMMUN RES INC 发明人 ZUYUKURIYU YUIRUMATSU;TEIRUMARAI BUENKATESAN
分类号 C01G1/00;C23C14/08;C23C14/28;C30B23/02;C30B23/08;C30B29/22;C30B29/30 主分类号 C01G1/00
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