| 摘要 |
PURPOSE:To correct the fluctuation in the delay time caused by a temperature change of an integrated circuit due to the dispersion in the characteristic of a MOS transistor(TR) caused at the manufacture of the integrated circuit and a temperature change in the integrated circuit due to self-heating or a change in ambient temperature. CONSTITUTION:This circuit consists of three function blocks of a clock signal generating circuit 1 used to generate a pulse signal SP with a prescribed width based on an external delay time correction request signal SD and a clock signal CK1, a switch control circuit 2 deciding switching control signals SC1-SC4 of a delay time during the production period of the pulse signal SP and a delay time changeover circuit 3 to switch the delay time based on the control signals SC1-SC4. |
