Semiconductor device mfr. from thin foil - using semiconductor supports during foil growth and structuring operations
摘要
Device mfr. from large thin foils consisting of the device layer sequence, involves: (a) growing the device layer sequence on a semiconductor substrate; (b) applying a release layer and a protective layer on the layer sequence; (c) bonding the layer sequence to a semiconductor support at the side opposite to the semiconductor substrate; (d) removing the substrate and structuring the layer sequence of the foil so that one or more semiconductor devices are produced; and (e) after finishing the device(s), removing the release layer and detaching the device(s) from the support. (Typist note: no more of patent was included)
申请公布号
DE4204436(A1)
申请公布日期
1993.08.19
申请号
DE19924204436
申请日期
1992.02.14
申请人
DAIMLER-BENZ AKTIENGESELLSCHAFT, 7000 STUTTGART, DE