发明名称 Semiconductor device mfr. from thin foil - using semiconductor supports during foil growth and structuring operations
摘要 Device mfr. from large thin foils consisting of the device layer sequence, involves: (a) growing the device layer sequence on a semiconductor substrate; (b) applying a release layer and a protective layer on the layer sequence; (c) bonding the layer sequence to a semiconductor support at the side opposite to the semiconductor substrate; (d) removing the substrate and structuring the layer sequence of the foil so that one or more semiconductor devices are produced; and (e) after finishing the device(s), removing the release layer and detaching the device(s) from the support. (Typist note: no more of patent was included)
申请公布号 DE4204436(A1) 申请公布日期 1993.08.19
申请号 DE19924204436 申请日期 1992.02.14
申请人 DAIMLER-BENZ AKTIENGESELLSCHAFT, 7000 STUTTGART, DE 发明人 KUISL, MAX, DR., 7900 ULM, DE
分类号 H01L21/78 主分类号 H01L21/78
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