PROCESS FOR PRODUCING THIN FILMS BY MEANS OF REACTIVE CATHODE SPUTTERING AND DEVICE FOR IMPLEMENTING IT

摘要

The invention relates to a process for producing thin films in which the pressure of the process gas is kept constant in a process chamber with a gas inlet and outlet, a target and a substrate, while material is sputtered from the target and deposited on the substrate. The invention also relates to a process for producing thin films. It is the purpose of the invention to create a process providing a more homogenous thin film. According to the invention, to this end the process gas is caused to reach the plasma. Alternatively, either one or several emission lines may be spectroscopically detected in a spatial region and, after a desired cross-sectional shape has been set, it is kept constant in time by subsequently regulating the process gas mixing ratio. It is also possible to attain the set aim by arranging a probe in such a way that charged atoms of the process gas are detected and, to attain the desired homogeneity, the voltage at the probe is constantly regulated by subsequently adjusting the process gas mixing ratio.