| 摘要 |
PURPOSE:To heighten strength of a position fitting mark signal, by using, as a position fitting mark, difference in level between a silicon nitride membrane and a silicon nitride membrane which is covered by a high-melting-point metal. CONSTITUTION:On a silicon substrate 1, a silicon oxide membrane pattern 2 and high-melting-point metals 3 such as molybdenum, titanium and tungsten, etc. are formed, and a silicon nitride membrane 4 is also formed by gaseous phase growth. The high-melting-point metals 3 are used as the materials for gate electrodes, and the silicon nitride membrane 4 is able to be etched simultaneously with etching of the materials for the gate electrodes, and it is also possible to use them for protection of the materials for the gate electrodes. |
