MELTING INDUCED DIFFUSION BONDING

摘要

Bonding process comprises providing insert of elemental material, selected from boron, carbon, hafnium and silicon having melting point higher than that point of base metal to which insert is to be bonded; then heating insert and base metal so diffusion occurs, under non-oxidising atmosphere, at temperature less than melting point of the insert. The insert material is not melted, but the insert material and the base metal are dissolved together. Purity of the insert is greater than 95 %.