| 摘要 |
An improved method of producing high purity silicon wherein the deposition rate for depositing silicon upon hot silicon carrier bodies through pyrolytic decomposition of silicon halide-hydrogen is significantly enhanced without increasing formation of free silicon particulate matter or silicon halide polymer coatings on reactor walls, the improvement resulting from the introduction of controlled amounts of less than 10% by weight of silane into the silicon halide-hydrogen reaction gas, the improved silicon deposition rate increasing substantially beyond the rate attributable to the stoichiometric addition amount of silane.
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