| 摘要 |
PURPOSE:To manufacture a low resistance P-type light-emitting element of purple color from blue color by a method wherein, after a P-impurity-doped II-VI compound semiconductor has been formed by a vapor growth method, an annealing treatment is conducted thereon at specific temperature or higher, or an electron beam irradiation is performed, and a cap layer is formed. CONSTITUTION:After P-impurity-doped II-VI compound semiconductor layer has been formed by a vapor growth method, it is annealed at the temperature higher than 300 deg.C. Also, after P-impurity-doped II-VI compound semiconductor layer has been formed, an electron beam is applied to the compound semiconductor layer. Besides, when an annealing treatment or an electron beam irradiation is conducted at 300 deg.C or higher, a cap layer may be formed on the P-impurity- doped II-VI compound semiconductor layer before conducting the above- mentioned treatment or operation for the purpose of suppressing the decomposition by heat of the II-VI compound semiconductor. The cap layer is a protective layer, and it can be formed into P-type of low resistance in reduced pressure or normal pressure. |
