发明名称 SELF-SHIFT TYPE GAS DISCHARGE PANEL AND MANUFACTURE THEREOF
摘要 PURPOSE:To prevent the storage of abnormal charge by employing a porous dielectric material layer for covering the electrode which constructs the discharge cell at one end of a shift channel and leaking the abnormal charge through the holes in said porous layer. CONSTITUTION:Glass substrates 2 and 5 formed with two groups of (Y) side shift electrodes y1i , y2i and (X) side shift electrodes X1j, X2j, dielectric material layers 3 and 6 and the surface layers of MgO 4 and 7 are faced each other to form a shift channel 8 in the gas discharge space 1. A writing electrode 9 is provided at the right end of the shift channel 8 thus to form a writing discharge cell (W). Then the porous sections 11 extending from the surface layer to the end section of the electrode are provided on the dielectric material layer 3 and 7 corresponding to the outermost electrode y2n and the writing electrode 9. The unnecessary wall charge on the dielectric material layer is leaked through said porous section to the electrodes y2n and 9. Consequently the abnormal storage of charge can be prevented.
申请公布号 JPS57105941(A) 申请公布日期 1982.07.01
申请号 JP19800182239 申请日期 1980.12.22
申请人 FUJITSU KK 发明人 SHIROUCHI YASUNARI;URADE TOSHINORI;OOTSUKA AKIRA
分类号 H01J9/02;H01J11/10;H01J11/12;H01J11/28;H01J11/38 主分类号 H01J9/02
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