| 摘要 |
PURPOSE:To increase dielectric resistance between a source and a drain by forming sections among a gate and the source and drain in offset structure by using the processes of reactive etching, which leaves polysilicon in a gate edge section, and ion implantation. CONSTITUTION:A gate oxide film 3 and a polysilicon gate electrode 4 are shaped to a silicon semiconductor substrate 1. An oxide film 5 is formed through thermal oxidiation. Polysilicon is grown under decompression. The polysilicon grows in the gate edge section in thickness larger than a flat section. The whole surface is etched through the reactive etching, the polysilicon of the flat section is removed, and the polysilicon 6' is left in the gate edge section. Ions are implanted in order to form the source and drain, and an N<+> region 2 is shaped. An N<-> region 2' is molded to an offset section by using the ion implantation method as necessary. |
