| 摘要 |
PURPOSE:To form a crossover or connection between two points on a substrate in a semiconductor device having semiconductor elements such as MOS or the like by performing the steps of forming a transistor. CONSTITUTION:A hole is opened at the field insulating layer on an Si substrate. Impurity ions are implanted thereon with a photoresist 7 as a mask to form a diffused layer 9. An SiO2 film 8 is formed by a gate oxidation. A polysilicon layer 2 is grown, and is etched to form an upper layer wire. When a diffused layer 3 is formed by source and drain diffusions, the layers 3 are conducted with the diffused layer 9 conducted previously, thereby forming a depletion type transistor structure with the layer 2 as a gate. Thus, a crossover structure can be formed. |
