| 摘要 |
PURPOSE:To eliminate a heat treatment by accumulating a metallic layer on the surface of a substrate exposed via a contacting hole formed at an insulator layer by employing a converged ion beam. CONSTITUTION:A contacting hole is formed by utilizing a photoresist film at an SiO2 film 12 formed on an Si substrate 11, an aluminum accumulated layer 15 is formed by using a converged ion beam, a resist is then removed, and a metallic layer 14 is then formed. Since a preferable contact can be performed in this manner at the time of forming the layer 15, it can eliminate a heat treatment, thereby reducing the influence of the heat treatment to the sybstrate. |
