| 摘要 |
PURPOSE: To form interconnections and contacts having the same top as an upper insulating layer by providing first and second patterned openings, coating, filling them with a conductive material, and removing the material up to the surface of the upper insulating layer. CONSTITUTION: First, several openings 28 passing through an interlayer oxide layer 26 and reaching an etching stop layer are provided. Second, several openings 24 passing through an interlayer insulating layer 16 and extending to a lower conductive structure 10 are provided. Then the surface and the openings 24 and 28 are coated and filled with aluminum, which is suitable for interconnection. The aluminum layer is subjected to an anisotropic selective etching back. The aluminum is left in the openings 24 to form aluminum contacts 32 and is also left in the openings 28 to form interconnections 34. The aluminum layer is removed up to the oxide layer 26. The top of the contacts 32 and that of the interconnections 34 are almost flush with the upper surface of the oxide layer 26. |
