| 摘要 |
<p>PURPOSE:To provide a film transistor of structure such that the burning hardly occurs and that the characteristics can be uniformed by lessening the area of an element, and the manufacture of its film transistor at high yield rate. CONSTITUTION:A thin film transistor is composed of an insulating substrate 1, a heat conductive layer 2, which is made on the insulating substrate 1 and heat conductivity of which is larger than the insulating substrate 1, an island- shaped polycrystalline silicon layer 6 in a semiconductor active area, which is made on the heat conductive layer 2, a gate electrode 7, which is made on the surface of the island-shaped silicon layer through an insulating layer, and a source electrode and a drain electrode, which are made in the island-shaped polycrystalline silicon layer 6 in the semiconductor active area. The heat generated from the island-shaped semiconductor active area or the heat added in manufacture process is dissipated being conducted in the direction parallel with the insulating substrate 1, inside the heat conductive layer 2 made on the insulating substrate 1.</p> |
