| 摘要 |
PURPOSE:To inhibit the formation of a compound layer and to prevent the surface roughening of a substance to be treated by controlling the mixing rate of N2 in a treating gas in nitriding using plasma or ion. CONSTITUTION:In surface treatment using plasma or ion, the mixing rate of gaseous N2 in the components of a treating gas is regulated to <=10%, and nitriding is carried out. By this method the formation of a compound layer is inhibited to the utmost, and the surface roughening of a substance to be treated is prevented. The size is hardly increased, and a hardened layer having a sufficient depth is formed. |
