MODIFICATION OF SEMICONDUCTOR FILM AND MANUFACTURE OF TFT

摘要

PURPOSE:To oxidize the surface part of a semiconductor film composed of polycrystalline silicon or amorphous silicon, under a specified temperature or lower and in a practical-level required time. CONSTITUTION:A semiconductor film 2 composed of polycrystalline silicon or amorphous silicon provided on a substrate 1 is kept at a specified temperature (500 deg.C, for example) of 600 deg.C or lower, being irradiated with ultraviolet rays. The surface part of the semiconductor film 2 is oxidized, while some part under the surface part is left unoxidized.