| 摘要 |
<p>PURPOSE:To control the occurrence of positional distortion caused by the deterioration of material and obtain an X-ray mask with 6 high quality capable of accurately holding an array of a mask pattern, by regulating an amount of hydrogen in a boron mask substrate to a specific value or below. CONSTITUTION:Nitrogen carbide boron films 2 are formed on the both sides of a silicon wafer 1 (100). In this case, an amount of hydrogen in the nitrogen carbide boron films 2 are regulated to the element ratio of 0.06 or below (BNxCyHz: z<=0.06). Next, the nitrogen carbide boron films 2 in the center of one side of a sample are removed and the silicon wafer 1 is etched back and a support substrate 3 of the nitrogen carbide boron films 2 is formed. Further, after passing the required process, an X-ray mask 11 consisting of Au patterns 10-1 having a desired circuit and the support substrate 3 of the nitrogen carbide boron films 2 is formed. Thus, the X-ray mask 11 which has the high stiffness and flatness capable of accurately holding an array of a mask pattern and in which an X-ray exposure is used and the position distortion caused by the deterioration of material does not occur can be obtained.</p> |
